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Dry etching

Isotropic Etching
Film etching only through a chemical reaction between film surface and radical
Anisotropic etching through random mobility of radical
High selectivity (chemical reaction)
Low damage to the bottom layer
Generation of undercut and difficulty with fine patterns
Excessive use of chemicals leading to environmental problems
Anisotropic etching
Etching by a chemical reaction stimulated by ions accelerated by self-bias
Almost no side erosion because of ions accelerated in one direction
Superior etching resolution (1um or below)
Damage to the bottom layer possible due to etching by physical impact

Dry etching Types

(Enhanced Capacitive Coupled Plasma)
CCP (Capacitive Coupled Plasma) is a device for generating
plasma with the structure in which a dielectric is inserted
between parallel plates
The plasma density is lower than the method of ICP
but can create uniform plasma in a relatively simple manner
It is widely used for semiconductor device and thin film Si
solar cell manufacturing processes because large-surface
etching and deposition is possible
(Inductive Coupled Plasma)
The method of ICP (Inductive Coupled Plasma) allows
electricity to flow through a coil-shaped antenna located
outside a reactive chamber so that electrons are vibrated
in a horizontal direction via the electric field
around the antenna, which leads to higher electron density
than other plasma sources due to low absorption of electrons
by electrodes (high-density plasma)
Etching is done by attracting ions from a bottom bias electrode