Dry Etcher
LTPS, Oxide
Key Features
- ICP Source for G2.5~G11
- Wide process window for all application (LTPS, Oxide TFT)
- Excellent Etch Rate & Uniformity (Unique antenna design & Zone Control)
- Excellent productivity (Anti - (ESD, Mura, Dint, ARC))
- Reliability (high uptime) & technical support
Specification
| TFT | Applicable Layer | Structure |
|---|---|---|
| Oxide | Contact (SiOx & SiNx) ESL (SiOx) |
 |
| LTPS (P-MOS) (N-MOS) (C-MOS) |
Poly-Si |  |
| Doped PR ashing | ||
| Contact (SiOx) | ||
| Gate Metal (Mo) | ||
| S/D Metal (Mo, Al, Ti) |
