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Dry Etcher System
Precision etching solutions leading global large-area display array processing
INVENIA’s ECCP Dry Etcher optimizes etch rate and uniformity across large substrates. Our ICP Dry Etcher uses high-density plasma, antenna design and independent control to create ultrafine circuit patterns. Together, they support all substrate generations from G2.5 to G10.5, covering small and medium substrates through large-area premium lines. Our track record includes supplying core equipment to global mass-production fabs operated by leading panel manufacturers such as LGD, BOE, CSOT, HKC, Tianma and AUO.
ECCP Dry Etcher
- Tact Time: ≤ 62sec
- Vacuum: P/C ≤ 5.0 × 10⁻⁵ Torr
- E/R: ≥ 800–4000 Å/min (insulating film, N+, ACT)
- Unif.(%) : ≤ 15%
ICP Dry Etcher
- Tact Time: ≤ 62sec
- Vacuum: P/C ≤ 5.0 × 10⁻⁵ Torr
- E/R: ≥ 2000–6000 Å/min (insulating film)
- Unif.(%) : ≤ 10%
